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PD -97551
AUTOMOTIVE GRADE
? Advanced Process Technology
? Optimized for Class D Audio Amplifier and High Speed
Switching Applications
? Low Rds(on) for Improved Efficiency
? Low Qg for Better THD and Improved Efficiency
? Low Qrr for Better THD and Lower EMI
? Low Parasitic Inductance for Reduced Ringing and Lower EMI
? Delivers up to 100W per Channel into an 8 Ω Load
? Dual Sided Cooling
? 175°C Operating Temperature
? Repetitive Avalanche Capability for Robustness and Reliability
? Lead free, RoHS and Halogen free
AUIRF7640S2TR
AUIRF7640S2TR1
DirectFET ? Power MOSFET ?
V (BR)DSS 60V
R DS(on) typ. 27m
max. 36m
R G (typical) 3.5
Q g (typical) 7.3nC
Applicable DirectFET Outline and Substrate Outline ?
SB
DirectFET ? ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET? Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier and other high speed
switching systems.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T C = 25°C
I D @ T C = 100°C
I D @ T A = 25°C
I D @ T C = 25°C
I DM
P D @T C = 25°C
P D @T A = 25°C
E AS
E AS (tested)
I AR
E AR
T P
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V (Silicon Limited)
Continuous Drain Current, V GS @ 10V (Silicon Limited)
Continuous Drain Current, V GS @ 10V (Silicon Limited)
Continuous Drain Current, V GS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
60
± 20
21
15
5.8
77
84
30
2.4
38
57
See Fig.18a, 18b, 15, 16
270
-55 to + 175
V
A
W
mJ
A
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
Junction-to-Ambient
Junction-to-Ambient
–––
12.5
63
–––
R θ JA
R θ J-Can
R θ J-PCB
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
20
–––
1.4
0.2
–––
5.0
–––
°C/W
W/°C
HEXFET ? is a registered trademark of International Rectifier.
www.irf.com
1
8/16/10
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